SAN JOSE, Calif. — Keeping up with rival Samsung Electronics Co. Ltd., Japan’s Toshiba Corp. announced the availability of a 16-gigabit, NAND-based flash memory chip, based on its multi-level cell (MLC) technology.
The part, dubbed the TH58NVG4D4CTG, is said to support 2-gigabytes (GB) of storage by stacking a pair of 8-Gbit chips