LONDON — As expected Elpida Memory Inc. has begun sampling 2-Gbit DDR2 synchronous DRAMs made using an 80-nanometer manufacturing process, but the Japanese DRAM supplier was vague on when volume production would start.
Elpida (Tokyo) did not say who is being provided with samples and added that volume production would begin “in accordance with market demand,” in a statement issued Monday.
The company announced the original development of the memory in June 2005 and at that time said volume production was expected to begin before the end of the fiscal year, which coincides with the end of the first calendar quarter of 2006.
Elpida seemed less confident in its most recent announcement in that it chose not to confirm the timetable and, instead, spoke of market demand. “Based on market demand, Elpida intends to use the 80-nm process for its most advanced DRAM devices at its newly expanded 300-mm wafer manufacturing facility, the E300 Fab, in Hiroshima, Japan,” said Jun Kitano, director of technical marketing for Elpida Memory (USA) Inc., in a statement.
The DRAMs are available graded at three data transmission rates; 533-, 667- or 800-Mbit/s, the company said. They are organized as either 64-Mwords by 4 bits by 8 banks or as 32-Mwords by 8 bits by 8 banks. The supply voltage (VDD) is 1.8V and the operating temperature range is 0 to 85C. The devices are available in 68-ball FBGA packages.